Role of low-temperature-grown GaAs substrate of photoconductive antenna in broadband terahertz time domain spectroscopy

被引：0
|
作者：
Shimosato, H. [1 ]
Katayama, L. [1 ]
Saito, S. [3 ]
Ashida, M. [1 ,2 ]
Itoh, T. [1 ]
Kadoya, Y. [4 ]
Sakai, K. [3 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama Cho, Toyonaka, Osaka 5608531, Japan
[2] PRESTO, Sci &Technol Agcy, Ueda, Nagano, Japan
[3] KARC, Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan
[4] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398530, Japan
来源：
2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 | 2007年
关键词：
annealing; dipole antennas; infrared spectroscopy; semiconductor growth;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the detection performance of photoconductive antennas fabricated on low-temperature-grown GaAs substrate. We compared terahertz waves detected with antennas annealed at different temperatures in terahertz time domain spectroscopy. The signal detected with the antenna annealed at higher temperature showed stronger intensity. On the other hand, the spectrum detected with the antenna annealed at lower temperature showed broader bandwidth.
引用
收藏
页码：477 / +
页数：2
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