Effect of Doped Buffer in Low-Temperature-Grown GaAs Terahertz Photoconductive Antenna Emitters and Detectors

被引：0

作者：

Prieto, Elizabeth Ann ^{[1
]}

De los Reyes, Alexander ^{[1
]}

Vistro, Victor D. C. Andres ^{[1
]}

Cabello, Neil Irvin ^{[1
]}

Faustino, Maria Angela ^{[1
]}

Ferrolino, John Paul ^{[1
]}

Vasquez, John Daniel ^{[1
]}

Bardolaza, Hannah ^{[1
]}

Afalla, Jessica Pauline ^{[2
,3
]}

Mag-usara, Valynn Katrine ^{[3
]}

Kitahara, Hideaki ^{[3
]}

Tani, Masahiko ^{[3
]}

Somintac, Armando ^{[1
]}

Salvador, Arnel ^{[1
]}

Estacio, Elmer ^{[1
]}

机构：

[1] Univ Philippines Diliman, Quezon City 1101, Philippines

[2] Univ Tsukuba, Tsukuba, Ibaraki 9103507, Japan

[3] Univ Fukui, Fukui 9108507, Japan

来源：

2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2020年

关键词：

MOLECULAR-BEAM EPITAXY; RADIATION;

D O I：

10.1109/IRMMW-THZ46771.2020.9370735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz (THz) photoconductive antenna (PCA) fabricated on low-temperature-grown GaAs (LT-GaAs) with layer structure consisting of a doped buffer exhibited enhanced THz emission for LT-GaAs grown at lower temperature. As THz emitter, the LT-GaAs grown at 270 degrees C with doped buffer generated THz radiation with amplitude twice as that of its undoped counterpart. Similar effect is not observed when the LT-GaAs is grown at 320 degrees C with doped buffer, which is expected to have higher THz emission. As THz detector, both LT-GaAs with doped buffer exhibited identical and improved detection sensitivity regardless of the LT-GaAs growth temperature.

引用

页数：2

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