Terahertz time-domain-spectroscopy system using a 1 micron wavelength laser and photoconductive components made from low-temperature-grown GaAs

被引：0

作者：

A. Bičiūnas

J. Adamonis

A. Krotkus

机构：

[1] Center for Physical Sciences and Technology,

来源：

Journal of Infrared, Millimeter, and Terahertz Waves | 2012年 / 33卷

关键词：

Terahertz; Optical pump – THz probe; LTG GaAs; 1 μm wavelength time-domain-spectroscopy; Optoelectronic terahertz components;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A terahertz time-domain spectroscopy (TDS) system based on a femtosecond Yb:KGW laser, photoconductive emitters and detectors made from as-grown and from annealed at moderate temperatures (~400°C) low-temperature-grown GaAs (LTG GaAs) layers was demonstrated. The measured photoconductivity of these layers increased linearly with the optical power, showing that transitions from the defect band to the conduction band are dominant. The largest amplitude THz pulse with a useful signal bandwidth reaching 3 THz and its signal-to-noise ratio exceeding 50 dB was emitted by the device made from the LTG GaAs layer annealed at 420°C temperature. The detector made from this material was by an order of magnitude less sensitive than conventional GaBiAs detectors.

引用

页码：183 / 191

页数：8

共 16 条

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