Design of high performance CMOS linear readout integrated circuit

被引：3

作者：

Gao, J ^{[1
]}

Lu, WG ^{[1
]}

Liu, J ^{[1
]}

Cui, WT ^{[1
]}

Tang, J ^{[1
]}

Chen, ZJ ^{[1
]}

Ji, LJ ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2003 5TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS | 2003年

关键词：

TDI ROIC;

D O I：

10.1109/ICASIC.2003.1277622

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper details a high performance CMOS linear readout integrated circuit (ROIC) and the measured result. This ROIC realizes time-delay integration (TDI) to enhance the signal to noise ratio (S/N). and defective element deselection (DED) to decrease the probability of bad columns. The other features include adjustable integration time, multi gain, bi-direction of TDI scan, super-sample, and electrical test. It is fabricated using 1.2-mu m double poly double metal (DPDM) CMOS technology. The total power consumption is about 24mW at 5V supply voltage.

引用

页码：607 / 610

页数：4

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