Design of CMOS Analog Integrated Readout Circuit for NMOS THz Detectors

被引：0

作者：

Kolacinski, Cezary ^{[1
]}

Obrebski, Dariusz ^{[1
]}

机构：

[1] Inst Electr Mat Technol, ICs & Syst Design Dept, Warsaw, Poland

来源：

MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013 | 2013年

关键词：

terahertz detector; chopper amplifier; instrumentation amplifier; Voltage Controlled Amplifier; Programmable Gain Amplifier; readout circuit; AMS C35; DC CURRENT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes design of readout circuit destined for NMOS terahertz detectors. The proposed architecture bases on chopper amplifier and instrumentation amplifier concepts. The main goals were to achieve high gain (max. 100 dB) and to enable proper operation with NMOS-based THz detector. For the research needs three different architectures of chopper amplifier have been developed. The designed chip was fabricated in well-known AMS C35 process (350 nm feature size). Another issue described in this paper is dedicated testing environment. At the end a few measurement results are shown.

引用

页码：222 / 228

页数：7

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