CMOS Readout Circuit Integrated with Ionizing Radiation Detectors

被引：0

作者：

Szymanski, Andrzej ^{[1
]}

Obrebski, Dariusz ^{[1
]}

Marczewski, Jacek ^{[2
]}

Tomaszewski, Daniel ^{[2
]}

Grodner, Miroslaw ^{[1
]}

Pieczynski, Janusz ^{[3
]}

机构：

[1] Inst Technol Elekt, Integrated Circuits & Syst Design Dept, Warsaw, Poland

[2] Inst Technol Elekt, Div Microsyst & Nanostruct Technol, Warsaw, Poland

[3] Fraunhofer Inst Microelect Circuits & Syst Duisbu, Duisburg, Germany

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS | 2014年 / 60卷 / 01期

关键词：

readout electronics; ASIC; SOI; ionizing radiation detectors;

D O I：

10.2478/eletel-2014-0014

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon process deployed.

引用

页码：117 / 124

页数：8

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