Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

被引：60
|
作者：
Iliopoulos, E
Ludwig, KF
Moustakas, TD
Chu, SNG
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期
关键词：
D O I：
10.1063/1.1341222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It was found that the ratio of group-III to group-V fluxes influences the relative incorporation of gallium and aluminum in the films. The transmission electron microscopy and x-ray diffraction studies revealed the existence of three types of spontaneously formed superlattice structures with periodicities of 2, 7, and 12 ML. While the 2 ML ordering is preferred under group-V rich conditions of growth, the 7 and 12 ML orderings were observed under group-III rich conditions of growth. (C) 2001 American Institute of Physics.
引用
收藏
页码：463 / 465
页数：3
相关论文
共 50 条
  • [21] Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition
    Browne, David A.
    Fireman, Micha N.
    Mazumder, Baishakhi
    Kuritzky, Leah Y.
    Wu, Yuh-Renn
    Speck, James S.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (02)
  • [22] Acceptorlike behavior of defects in sige alloys grown by molecular beam epitaxy
    Satoh, Motoki
    Arimoto, Keisuke
    Nakagawa, Kiyokazu
    Koh, Shinji
    Sawano, Kentarou
    Shiraki, Yasuhiro
    Usami, Noritaka
    Nakajima, Kazuo
    Japanese Journal of Applied Physics, 2008, 47 (6 PART 1): : 4630 - 4633
  • [23] Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy
    Karrer, U
    Dobner, A
    Ambacher, O
    Stutzmann, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 163 - 167
  • [24] AlGaN/GaN heterostructure field effect transistor materials grown by molecular beam epitaxy
    Sun, Dianzhao
    Wang, Xiaoliang
    Hu, Guoxin
    Wang, Junxi
    Liu, Hongxin
    Liu, Chenghai
    Zeng, Yiping
    Li, Jinmin
    Lin, Lanying
    Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics, 2002, 22 (02): : 202 - 204
  • [25] Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
    Grandjean, N
    Massies, J
    Leroux, M
    Laügt, M
    Lefebvre, P
    Gil, B
    Allègre, J
    Bigenwald, P
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [26] Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy
    Borisov, B. A.
    Nikishin, S. N.
    Kuryatkov, V. V.
    Kuchinskii, V. I.
    Holtz, M.
    Temkin, H.
    SEMICONDUCTORS, 2006, 40 (04) : 454 - 458
  • [27] AlGaN-based photodetectors grown by gas source molecular beam epitaxy with ammonia
    Kuryatkov, VV
    Kipshidze, GD
    Nikishin, SA
    Deelman, PW
    Temkin, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 317 - 320
  • [28] Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet
    Yin, Xue
    Zhao, Songrui
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (12):
  • [29] Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy
    B. A. Borisov
    S. N. Nikishin
    V. V. Kuryatkov
    V. I. Kuchinskiĭ
    M. Holtz
    H. Temkin
    Semiconductors, 2006, 40 : 454 - 458
  • [30] Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy
    Dimitrov, R
    Wittmer, L
    Felsl, HP
    Mitchell, A
    Ambacher, O
    Stutzmann, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 168 (02): : R7 - R8
12345