Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

被引：60
|
作者：
Iliopoulos, E
Ludwig, KF
Moustakas, TD
Chu, SNG
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期
关键词：
D O I：
10.1063/1.1341222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It was found that the ratio of group-III to group-V fluxes influences the relative incorporation of gallium and aluminum in the films. The transmission electron microscopy and x-ray diffraction studies revealed the existence of three types of spontaneously formed superlattice structures with periodicities of 2, 7, and 12 ML. While the 2 ML ordering is preferred under group-V rich conditions of growth, the 7 and 12 ML orderings were observed under group-III rich conditions of growth. (C) 2001 American Institute of Physics.
引用
收藏
页码：463 / 465
页数：3
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