AlGaN/GaN heterostructure field effect transistor materials grown by molecular beam epitaxy

被引：0
|
作者：
Sun, Dianzhao [1 ]
Wang, Xiaoliang [1 ]
Hu, Guoxin [1 ]
Wang, Junxi [1 ]
Liu, Hongxin [1 ]
Liu, Chenghai [1 ]
Zeng, Yiping [1 ]
Li, Jinmin [1 ]
Lin, Lanying [1 ]
机构：
[1] Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics | 2002年 / 22卷 / 02期
关键词：
Electron concentration - Epitaxial layers - Heterostructure field effect transistors;
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页码：202 / 204
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