AlGaN/GaN heterostructure field effect transistor materials grown by molecular beam epitaxy

被引：0

作者：

Sun, Dianzhao ^{[1
]}

Wang, Xiaoliang ^{[1
]}

Hu, Guoxin ^{[1
]}

Wang, Junxi ^{[1
]}

Liu, Hongxin ^{[1
]}

Liu, Chenghai ^{[1
]}

Zeng, Yiping ^{[1
]}

Li, Jinmin ^{[1
]}

Lin, Lanying ^{[1
]}

机构：

[1] Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics | 2002年 / 22卷 / 02期

关键词：

Electron concentration - Epitaxial layers - Heterostructure field effect transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：202 / 204

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