Switching control of resistive switching devices

被引:24
|
作者
Chen, An [1 ]
机构
[1] GLOBALFOUNDRIES, Strateg Technol Grp, Sunnyvale, CA 94088 USA
关键词
FILMS; OXIDE;
D O I
10.1063/1.3532969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and reset forces. Effective switching control improves device characteristics including uniform resistance distribution and low reset current. However, it also presents challenges for the choice of selection devices and the feasibility of unconventional architectures for resistive switching devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532969]
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
    Kim, Hee-Dong
    Yun, Min Ju
    Kim, Sungho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (03) : 439 - 442
  • [32] The ultimate switching speed limit of redox-based resistive switching devices
    Menzel, Stephan
    von Witzleben, Moritz
    Havel, Viktor
    Boettger, Ulrich
    FARADAY DISCUSSIONS, 2019, 213 : 197 - 213
  • [33] Control of resistive switching behaviors of solution- processed HfOX-based resistive switching memory devices by n-type doping
    Akbari, Masoud
    Lee, Jang-Sik
    RSC ADVANCES, 2016, 6 (26) : 21917 - 21921
  • [34] Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices
    Liu, L. F.
    Chen, Y. S.
    Kang, J. F.
    Wang, Y.
    Han, D. D.
    Liu, X. Y.
    Zhang, X.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (11)
  • [35] Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices
    Recher, Shani
    Yalon, Eilam
    Ritter, Dan
    Riess, Ilan
    Salzman, Joseph
    SOLID-STATE ELECTRONICS, 2015, 111 : 238 - 242
  • [36] Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
    Li, Yingtao
    Li, Xiaoyan
    Fu, Liping
    Chen, Rongbo
    Wang, Hong
    Gao, Xiaoping
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5390 - 5394
  • [37] Scaling of oxide-based resistive switching devices
    Ielmini, D.
    Ambrogio, S.
    Balatti, S.
    2014 14TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2014,
  • [38] Resistive Switching in Organic Memory Devices for Flexible Applications
    Huang, Ru
    Cai, Yimao
    Liu, Yefan
    Bai, Wenliang
    Kuang, Yongbian
    Wang, Yangyuan
    2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2014, : 838 - 841
  • [39] Characterization of Resistive Switching Memory Devices with Tunnel Barrier
    Kim, Sungjun
    Kim, Min-Hwi
    Kim, Tae-Hyeon
    Bang, Suhyun
    Lee, Dong Keun
    Chani, Yao-Feng
    Park, Byung-Gook
    2017 SILICON NANOELECTRONICS WORKSHOP (SNW), 2017, : 87 - 88
  • [40] Resistive switching of rose bengal devices:: A molecular effect?
    Karthaeuser, Silvia
    Luessem, Bjorn
    Weides, Martin
    Alba, Manuela
    Besmehn, Astrid
    Oligschlaeger, Robert
    Waser, Rainer
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)