Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

被引：7

作者：

Kim, Hee-Dong ^{[1
]}

Yun, Min Ju ^{[1
]}

Kim, Sungho ^{[1
]}

机构：

[1] Sejong Univ, Dept Elect Engn, Seoul 05006, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 69卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

HfO2; films; MOCVD; ReRAM; BEHAVIOR;

D O I：

10.3938/jkps.69.439

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 mu A and 4 mu A, respectively, at V (READ) = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 10(5) s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

引用

页码：439 / 442

页数：4

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