Resistive switching characteristics of HfO2 grown by atomic layer deposition

被引：0
|
作者：
Kim, Kyong-Rae [1 ]
Park, In-Sung
Hong, Jin Pyo
Lee, Sang Seol
Choi, Bang Lim
Ahn, Jinho
机构：
[1] Hanyang Univ, Dept Informat Display Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Informat Display Res Inst, Seoul 133791, South Korea
[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[4] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 49卷
关键词：
resistive switching; Re-RAM; HfO2; atomic layer deposition; MIM;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resistive switching characteristics of insulating HfO2 grown by the atomic layer deposition (ALD) technique were investigated. From I-V analyses of a Mo/HfO2/Mo device, the resistive switching behaviors were not symmetric for voltage polarity. These behaviors were well explained on the basis of the different top and bottom HfO2 interface states observed by X-ray photoelectron spectroscopy. For the as-deposited HfO2 film, a low resistance state showed an ohmic conduction behavior but a high resistance state showed a Poole-Frenkel mechanism. Moreover, the operation voltages to switch the resistance states were slightly increased by a 400 degrees C annealing process. The resistive switching behaviors are related to not only the defects in the insulator but also the electrode.
引用
收藏
页码：S548 / S551
页数：4
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