Switching control of resistive switching devices

被引:24
|
作者
Chen, An [1 ]
机构
[1] GLOBALFOUNDRIES, Strateg Technol Grp, Sunnyvale, CA 94088 USA
关键词
FILMS; OXIDE;
D O I
10.1063/1.3532969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and reset forces. Effective switching control improves device characteristics including uniform resistance distribution and low reset current. However, it also presents challenges for the choice of selection devices and the feasibility of unconventional architectures for resistive switching devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532969]
引用
收藏
页数:3
相关论文
共 50 条
  • [21] Standards for the Characterization of Endurance in Resistive Switching Devices
    Lanza, Mario
    Waser, Rainer
    Ielmini, Daniele
    Yang, J. Joshua
    Goux, Ludovic
    Sune, Jordi
    Kenyon, Anthony Joseph
    Mehonic, Adnan
    Spiga, Sabina
    Rana, Vikas
    Wiefels, Stefan
    Menzel, Stephan
    Valov, Ilia
    Villena, Marco A.
    Miranda, Enrique
    Jing, Xu
    Campabadal, Francesca
    Gonzalez, Mireia B.
    Aguirre, Fernando
    Palumbo, Felix
    Zhu, Kaichen
    Roldan, Juan Bautista
    Puglisi, Francesco Maria
    Larcher, Luca
    Hou, Tuo-Hung
    Prodromakis, Themis
    Yang, Yuchao
    Huang, Peng
    Wan, Tianqing
    Chai, Yang
    Pey, Kin Leong
    Raghavan, Nagarajan
    Duenas, Salvador
    Wang, Tao
    Xia, Qiangfei
    Pazos, Sebastian
    ACS NANO, 2021, 15 (11) : 17214 - 17231
  • [22] Dynamic resistive switching devices for neuromorphic computing
    Wu, Yuting
    Wang, Xinxin
    Lu, Wei D.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (02)
  • [23] FeZnO-Based Resistive Switching Devices
    Yang Zhang
    Ziqing Duan
    Rui Li
    Chieh-Jen Ku
    Pavel Reyes
    Almamun Ashrafi
    Yicheng Lu
    Journal of Electronic Materials, 2012, 41 : 2880 - 2885
  • [24] In-memory computing with resistive switching devices
    Ielmini, Daniele
    Wong, H. -S. Philip
    NATURE ELECTRONICS, 2018, 1 (06): : 333 - 343
  • [25] In-memory computing with resistive switching devices
    Daniele Ielmini
    H.-S. Philip Wong
    Nature Electronics, 2018, 1 : 333 - 343
  • [26] Heat Dissipation Mechanisms in Resistive Switching Devices
    Yalon, E.
    Ritter, D.
    Riess, I.
    2013 13TH NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2013,
  • [27] π-Conjugated nitroxide radicals for resistive switching devices
    Hu, Xiaoguang
    Ding, Juan
    Chen, Hanjiao
    Hou, Yan
    Li, Huaqing
    Sun, Yajing
    Liu, Xuying
    SCIENCE BULLETIN, 2024, 69 (17) : 2675 - 2678
  • [28] Resistive switching in memristive electrochemical metallization devices
    Dirkmann, Sven
    Mussenbrock, Thomas
    AIP ADVANCES, 2017, 7 (06)
  • [29] Resistive Switching Memory Devices Based on Proteins
    Wang, Hong
    Meng, Fanben
    Zhu, Bowen
    Leow, Wan Ru
    Liu, Yaqing
    Chen, Xiaodong
    Advanced Materials, 2015, : 7670 - 7676
  • [30] Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
    Hee-Dong Kim
    Min Ju Yun
    Sungho Kim
    Journal of the Korean Physical Society, 2016, 69 : 439 - 442