Use of Temperature-Switching Approach to Evaluate the ELDRS of Bipolar Devices

被引：0
|
作者：
Li Xiaolong [1 ]
Lu Wu [2 ]
Ma Wuying
Wang Xin [1 ]
Zheng Yuzhan
Ren Diyuan [2 ]
Guo Qi [2 ]
He Chengfa [2 ]
Yu Xuefeng [2 ]
Aierken [2 ]
Li Yudong [2 ]
机构：
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Xinjiang, Peoples R China
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
来源：
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词：
Accelerated test technique; Bipolar technology; Dose rate; Enhanced low dose rate sensitivity; LOW-DOSE-RATE; INTERFACE-TRAP FORMATION; RATE SENSITIVITY; IRRADIATION; HYDROGEN; TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low dose rate response of bipolar ICs and discrete device are evaluated on the basis of different experiments. Based on experiments, a time-saving and conservative approach -temperature switching approach (TSA)-to simulate the enhanced low dose rate sensitivity (ELDRS) of bipolar devices is presented. Good agreement is observed between the predictive curve obtained with the temperature switching approach and the low dose rate data. Moreover, a description of the underling mechanisms of TSA is analyzed in this paper.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] An approach for selecting switching devices for CFL ballasts
    Laskai, L
    Ilic, M
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2001, 37 (01) : 268 - 275
  • [42] An approach for selecting switching devices for CFL ballasts
    Laskai, L
    Ilic, M
    CONFERENCE RECORD OF THE 1998 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-3, 1998, : 2137 - 2144
  • [43] An Integrative Computational Approach to Evaluate Genetic Markers for Bipolar Disorder
    Xu, Yong
    Wang, Jun
    Rao, Shuquan
    Ritter, McKenzie
    Manor, Lydia C.
    Backer, Robert
    Cao, Hongbao
    Cheng, Zaohuo
    Liu, Sha
    Liu, Yansong
    Tian, Lin
    Dong, Kunlun
    Shugart, Yin Yao
    Wang, Guoqiang
    Zhang, Fuquan
    SCIENTIFIC REPORTS, 2017, 7
  • [44] An Integrative Computational Approach to Evaluate Genetic Markers for Bipolar Disorder
    Yong Xu
    Jun Wang
    Shuquan Rao
    McKenzie Ritter
    Lydia C. Manor
    Robert Backer
    Hongbao Cao
    Zaohuo Cheng
    Sha Liu
    Yansong Liu
    Lin Tian
    Kunlun Dong
    Yin Yao Shugart
    Guoqiang Wang
    Fuquan Zhang
    Scientific Reports, 7
  • [45] LOW-TEMPERATURE OPERATION OF BIPOLAR AND MOS DEVICES
    OOSAKA, F
    NAKAMURA, T
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1978, 14 (03): : 53 - 76
  • [46] Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices
    Sang-Jun Choi
    Ki-Hong Kim
    Woo-Young Yang
    Sohyeon Kim
    Semi Oh
    Kyoung-Kook Kim
    Yunkyung Kim
    Minki Hong
    Kiyoung Nam
    Soohaeng Cho
    Applied Physics A, 2017, 123
  • [47] Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices
    Choi, Sang-Jun
    Kim, Ki-Hong
    Yang, Woo-Young
    Kim, Sohyeon
    Oh, Semi
    Kim, Kyoung-Kook
    Kim, Yunkyung
    Hong, Minki
    Nam, Kiyoung
    Cho, Soohaeng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (05):
  • [48] Bipolar resistive switching from liquid helium to room temperature
    Blonkowski, S.
    Cabout, T.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (34)
  • [49] Radiation and temperature effects on the switching characteristics of junction bipolar transistors
    Kamh, S.A.
    Montasser, K.I.
    Soliman, F.A.S.
    Abd El-Maksood, A.M.
    Modelling, Measurement and Control A, 2001, 74 (3-4): : 13 - 28
  • [50] Comparison of bipolar and unipolar SiC switching devices for very high power applications
    Bertilsson, K.
    Harris, C. I.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 975 - +
12345