Use of Temperature-Switching Approach to Evaluate the ELDRS of Bipolar Devices

被引：0
|
作者：
Li Xiaolong [1 ]
Lu Wu [2 ]
Ma Wuying
Wang Xin [1 ]
Zheng Yuzhan
Ren Diyuan [2 ]
Guo Qi [2 ]
He Chengfa [2 ]
Yu Xuefeng [2 ]
Aierken [2 ]
Li Yudong [2 ]
机构：
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Xinjiang, Peoples R China
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
来源：
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词：
Accelerated test technique; Bipolar technology; Dose rate; Enhanced low dose rate sensitivity; LOW-DOSE-RATE; INTERFACE-TRAP FORMATION; RATE SENSITIVITY; IRRADIATION; HYDROGEN; TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low dose rate response of bipolar ICs and discrete device are evaluated on the basis of different experiments. Based on experiments, a time-saving and conservative approach -temperature switching approach (TSA)-to simulate the enhanced low dose rate sensitivity (ELDRS) of bipolar devices is presented. Good agreement is observed between the predictive curve obtained with the temperature switching approach and the low dose rate data. Moreover, a description of the underling mechanisms of TSA is analyzed in this paper.
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页数：5
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