A 29.5 dBm Class-E Outphasing RF Power Amplifier with Performance Enhancement Circuits in 45nm CMOS

被引：0

作者：

Banerjee, Aritra ^{[1
]}

Hezar, Rahmi ^{[1
]}

Ding, Lei ^{[1
]}

Schemm, Nathan ^{[1
]}

Haroun, Baher ^{[1
]}

机构：

[1] Texas Instruments Inc, Kilby Labs, Dallas, TX 75243 USA

来源：

PROCEEDINGS OF THE 40TH EUROPEAN SOLID-STATE CIRCUIT CONFERENCE (ESSCIRC 2014) | 2014年

关键词：

RF; power amplifier; outphasing; class-E; TRANSMITTER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high efficiency class-E outphasing RF power amplifier is presented using a new passive combining circuit. A Power Enhancement Circuit (PEC) and an Efficiency Enhancement Circuit (EEC) are also proposed as part of the combiner that increase output power without violating reliability limits and improve efficiency at power back-off, respectively. The proposed power amplifier is designed in 45nm CMOS technology. Simulation results and measurement data are presented to demonstrate the performance of the proposed PA. The PA delivers 29.5 dBm peak output power at 2.4GHz with 46.76% drain efficiency at peak output power, 32.96% drain efficiency at 3 dB power back-off and 21.16% drain efficiency at 6 dB power back-off. Better than -50 dBc ACPR is obtained with 64-QAM LTE signal with 10MHz and 20MHz bandwidth. 21% average efficiency is obtained with LTE signal with 6 dB peak-to-average power ratio (PAPR).

引用

页码：467 / 470

页数：4

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