Reliability Study of a Low-Voltage Class-E Power Amplifier in 130nm CMOS

被引：0
|
作者：
Fritzin, Jonas [1 ]
Sundstrom, Timmy [1 ]
Johansson, Ted [1 ]
Alvandpour, Atila [1 ]
机构：
[1] Linkoping Univ, Dept Elect Engn, Div Elect Devices, SE-58183 Linkoping, Sweden
来源：
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年
关键词：
CMOS; efficiency; power amplifier; reliability testing; STRESS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents reliability measurements of a differential Class-E power amplifier (PA) operating at 850MHz in 130nm CMOS. The RF performance of five samples was tested. At 1.1V, the PAs deliver +20.4-21.5dBm of output power with drain efficiencies and power-added efficiencies of 56-64% and 46-51%, respectively. After a continuous long-term test of 240 hours at elevated supply voltage of 1.4V, the output power dropped about 0.7dB.
引用
收藏
页码：1907 / 1910
页数：4
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