Piezoelectric properties of zinc blende quantum dots

被引:6
|
作者
Schulz, S. [1 ]
Caro, M. A. [1 ,2 ]
O'Reilly, E. P. [1 ,2 ]
Marquardt, O. [1 ]
机构
[1] Tyndall Natl Inst, Photon Theory Grp, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 03期
基金
爱尔兰科学基金会;
关键词
built-in fields; nitrides; piezoelectric coefficients; quantum dots; zinc blende; MOLECULAR-BEAM EPITAXY; III-V-NITRIDES; ALUMINUM NITRIDE; GALLIUM-NITRIDE; GAN; 1ST-PRINCIPLES; WURTZITE; CONSTANTS; ALN; POLARIZATION;
D O I
10.1002/pssb.201100362
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Piezoelectric coefficients of zinc blende (ZB) InN, GaN, and AlN have been estimated from the piezoelectric coefficients of the wurtzite (WZ) system. This procedure is based on a rotation of the first-order piezoelectric tensor of a (001)-oriented ZB structure to a (111)-oriented ZB structure, which is similar to a WZ structure. The derived expressions for the piezoelectric coefficients in a (111)-oriented ZB system are benchmarked against literature coefficients of different WZ materials, showing a very good agreement. To perform the desired opposite operation, a least square fitting procedure was used to find the ZB piezoelectric coefficient e14 that provides the closest reverse transformation to the known WZ constants. Using e14, the piezoelectric potential in a GaN/AlN QD is calculated and compared to a InAs/GaAs QD, revealing a much larger potential in the nitride system, even though the lattice mismatch is much smaller in this system. The result is related to the large piezoelectric coefficient e14 in ZB nitride materials.
引用
收藏
页码:521 / 525
页数:5
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