Optical properties of wurtzite and zinc-blende GaN/AlN quantum dots

被引:45
|
作者
Fonoberov, VA [1 ]
Balandin, AA [1 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA
来源
关键词
D O I
10.1116/1.1768188
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate theoretically and compare optical properties of wurtzite and zinc-blende GaN/AIN quantum dots with heights, from 1.5 to 4.5 nm. The quantum dot size corresponds to the strong quantum confinement regime. It has been established that the built-in piezoelectric field at the GaN/AIN interface governs optical properties of wurtzite quantum dots while having a small effect on zinc-blende quantum,dots. The strain field strongly modifies the excitonic states in both wurtzite and zinc-blende GaN/AIN quantum dots. It has been shown that the radiative lifetime dependence on the quantum dot height is very different in the zinc-blende and wurtzite quantum dots. The excitonic optical properties of GaN/AIN quantum dots calculated using our model are in good agreement with available experimental data. Reported theoretical results for the optical spectra of GaN/AIN quantum dots can be used for interpretation of experimental data and optimization of the quantum dot structures for optoelectronic applications. (C) 2004 American Vacuum Society.
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页码:2190 / 2194
页数:5
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