Piezoelectric properties of zinc blende quantum dots

被引:6
|
作者
Schulz, S. [1 ]
Caro, M. A. [1 ,2 ]
O'Reilly, E. P. [1 ,2 ]
Marquardt, O. [1 ]
机构
[1] Tyndall Natl Inst, Photon Theory Grp, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 03期
基金
爱尔兰科学基金会;
关键词
built-in fields; nitrides; piezoelectric coefficients; quantum dots; zinc blende; MOLECULAR-BEAM EPITAXY; III-V-NITRIDES; ALUMINUM NITRIDE; GALLIUM-NITRIDE; GAN; 1ST-PRINCIPLES; WURTZITE; CONSTANTS; ALN; POLARIZATION;
D O I
10.1002/pssb.201100362
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Piezoelectric coefficients of zinc blende (ZB) InN, GaN, and AlN have been estimated from the piezoelectric coefficients of the wurtzite (WZ) system. This procedure is based on a rotation of the first-order piezoelectric tensor of a (001)-oriented ZB structure to a (111)-oriented ZB structure, which is similar to a WZ structure. The derived expressions for the piezoelectric coefficients in a (111)-oriented ZB system are benchmarked against literature coefficients of different WZ materials, showing a very good agreement. To perform the desired opposite operation, a least square fitting procedure was used to find the ZB piezoelectric coefficient e14 that provides the closest reverse transformation to the known WZ constants. Using e14, the piezoelectric potential in a GaN/AlN QD is calculated and compared to a InAs/GaAs QD, revealing a much larger potential in the nitride system, even though the lattice mismatch is much smaller in this system. The result is related to the large piezoelectric coefficient e14 in ZB nitride materials.
引用
收藏
页码:521 / 525
页数:5
相关论文
共 50 条
  • [21] Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects
    Bester, G
    Zunger, A
    PHYSICAL REVIEW B, 2005, 71 (04)
  • [22] Hydrogenic impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots
    Xia, Congxin
    Zeng, Zaiping
    Wei, Shuyi
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (05) : 624 - 630
  • [23] Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure
    Yang, Shuang
    Ding, Kun
    Dou, Xiuming
    Wu, Xuefei
    Yu, Ying
    Ni, Haiqiao
    Niu, Zhichuan
    Jiang, Desheng
    Li, Shu-Shen
    Luo, Jun-Wei
    Sun, Baoquan
    PHYSICAL REVIEW B, 2015, 92 (16)
  • [24] Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation
    Schupp, T.
    Meisch, T.
    Neuschl, B.
    Feneberg, M.
    Thonke, K.
    Lischka, K.
    As, D. J.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 286 - 289
  • [25] Magnetooptical properties of quantum dots: Influence of the piezoelectric field
    Krapek, Vlastimil
    Schliwa, Andrei
    Bimberg, Dieter
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1163 - 1165
  • [26] Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence
    Lagarde, D.
    Balocchi, A.
    Carrrere, H.
    Renucci, P.
    Amand, T.
    Founta, S.
    Mariette, H.
    Marie, X.
    MICROELECTRONICS JOURNAL, 2009, 40 (02) : 328 - 330
  • [27] Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
    Wei, Shuyi
    Chang, Qing
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01): : 354 - 358
  • [28] Optical Properties in Zinc-Blende CdZnSe/ZnSe Quantum Well Structures
    Park, Seoung-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (04) : 1496 - 1499
  • [29] Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures
    Duggen, Lars
    Willatzen, Morten
    Lassen, Benny
    PHYSICAL REVIEW B, 2008, 78 (20):
  • [30] Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy
    Sergent, S.
    Kako, S.
    Buerger, M.
    Schupp, T.
    As, D. J.
    Arakawa, Y.
    APPLIED PHYSICS LETTERS, 2014, 105 (14)