An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

被引：11

作者：

Lin, H. ^{[1
]}

Smith, S. ^{[1
]}

Stevenson, J. T. M. ^{[1
]}

Gundlach, A. M. ^{[1
]}

Dunare, C. C. ^{[1
]}

Walton, A. J. ^{[1
]}

机构：

[1] Univ Edinburgh, Sch Engn & Elect, Part Inst Integrated Syst, Inst Integrated Micro & Nano Syst, Edinburgh EH9 3JF, Midlothian, Scotland

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS | 2008年

关键词：

D O I：

10.1109/ICMTS.2008.4509326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).

引用

页码：123 / 127

页数：5

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