Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects

被引：15

作者：

Leong, H. L. ^{[1
,2
]}

Gan, C. L. ^{[1
]}

Made, R. I. ^{[1
]}

Thompson, C. V. ^{[2
,3
]}

Pey, K. L. ^{[2
,4
]}

Li, H. Y. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Singapore MIT Alliance, Singapore 117576, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[5] Inst Microelect, Singapore 117685, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 03期

关键词：

contact resistance; copper; interconnections; surface roughness; tape automated bonding; wafer bonding; CONSTRICTION RESISTANCE; ELECTRICAL-CONDUCTION; SIZE;

D O I：

10.1063/1.3074503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the surface roughness and applied loads on the specific electrical contact resistance of three-dimensional Cu-Cu bonded interconnects have been quantitatively investigated. Wafer-level thermocompression bonding was carried out on bonded Cu layers with either different surface roughness at a certain load or with similar surface roughness at different applied loads. Experimental results show that as the surface roughness of the Cu bonding layer increases or as the bonding load decreases, the specific contact resistance of the bonded interconnects increases. A model is presented which quantifies the relationship between the specific contact resistance and the true contact area (which is a function of the surface roughness and applied load). Through the true contact area, the integrity of a bonded interface may be predicted from the electrical measurement of the contact resistance.

引用

页数：6

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