STRUCTURE OF Ge2Sb2Te5 THIN FILMS NEAR THE INFLECTION POINT OF THE RESISTIVITY TEMPERATURE DEPENDENCE

被引：0
|
作者：
Zaytseva, Y. [1 ]
Lazarenko, P. [1 ]
Vorobyov, Yu [2 ]
Yakubov, A. [1 ]
Borgardt, N. [1 ]
Kozyukhin, S. [3 ,4 ]
Sherchenkov, A. [1 ]
机构：
[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia
[2] Ryazan State Radio Engn Univ, Ryazan 390005, Russia
[3] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[4] Natl Res Tomsk State Univ, Tomsk 634050, Russia
来源：
CHALCOGENIDE LETTERS | 2020年 / 17卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
Ge2Sb2Te5; Phase change material; Thin film; Crystallization; Resistivity; Inflection point; Transmission electron microscopy; PHASE-CHANGE MATERIALS; CRYSTALLIZATION; STABILITY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated Ge2Sb2Te5 thin films annealed at the temperatures specific to the crystallization process using transmission electron microscopy. The annealing temperatures typical for the inflection point (168 degrees C) of the temperature dependence of resistivity and at the end of the crystallization process (183 degrees C) were chosen for the TEM studies. These studies clearly showed that the inflection point on the temperature dependence of resistivity is identified with a two-stage character of Ge2Sb2Te5 thin films crystallization.
引用
收藏
页码：41 / 47
页数：7
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