Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

被引：0
|
作者：
Li, Zhibo [1 ]
Shutts, Samuel [1 ]
Allford, Craig P. [1 ]
Shi, Bei [2 ]
Luo, Wei [2 ]
Lau, Kei May [2 ]
Smowton, Peter M. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, EPSRC Future Compound Semicond Mfg Hub, Cardiff, S Glam, Wales
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
来源：
2019 IEEE PHOTONICS CONFERENCE (IPC) | 2019年
基金：
英国工程与自然科学研究理事会;
关键词：
InAs Quantum Dots; Defects; Monolithic Growth; 1.55 mu m laser diodes;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad-area 1.55 mu m InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
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页数：2
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