Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

被引：0
|
作者：
Li, Zhibo [1 ]
Shutts, Samuel [1 ]
Allford, Craig P. [1 ]
Shi, Bei [2 ]
Luo, Wei [2 ]
Lau, Kei May [2 ]
Smowton, Peter M. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, EPSRC Future Compound Semicond Mfg Hub, Cardiff, S Glam, Wales
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
来源：
2019 IEEE PHOTONICS CONFERENCE (IPC) | 2019年
基金：
英国工程与自然科学研究理事会;
关键词：
InAs Quantum Dots; Defects; Monolithic Growth; 1.55 mu m laser diodes;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad-area 1.55 mu m InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
引用
收藏
页数：2
相关论文
共 50 条
  • [11] Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
    Platz, C
    Paranthoën, C
    Caroff, P
    Bertru, N
    Labbé, C
    Even, J
    Dehaese, O
    Folliot, H
    Le Corre, A
    Loualiche, S
    Moreau, G
    Simon, JC
    Ramdane, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (05) : 459 - 463
  • [12] Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm
    Cade, N. I.
    Gotoh, H.
    Kamada, H.
    Nakano, H.
    Anantathanasarn, S.
    Notzel, R.
    APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [13] Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm
    Syperek, M.
    Dusanowski, L.
    Andrzejewski, J.
    Rudno-Rudzinski, W.
    Sek, G.
    Misiewicz, J.
    Lelarge, F.
    APPLIED PHYSICS LETTERS, 2013, 103 (08)
  • [14] Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55 μm
    Chouaib, H.
    Chauvin, N.
    Bru-Chevallier, C.
    Monat, C.
    Regreny, P.
    Gendry, M.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 90 - 94
  • [15] Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
    Syperek, M.
    Dusanowski, L.
    Gawelczyk, M.
    Sek, G.
    Somers, A.
    Reithmaier, J. P.
    Hoefling, S.
    Misiewicz, J.
    APPLIED PHYSICS LETTERS, 2016, 109 (19)
  • [16] Growth of InAs/InP-based quantum dots for 1.55 μm laser applications
    Poole, P. J.
    Kaminska, K.
    Barrios, P.
    Lu, Z.
    Liu, J.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1482 - 1486
  • [17] An analysis of 1.55 μm InAs/InP quantum dash lasers
    Heck, S. C.
    Healy, S. B.
    Osborne, S.
    O'Reilly, E. P.
    Lelarge, F.
    Poingt, F.
    Accard, A.
    Pommereau, F.
    Le Gouezigou, O.
    Dagens, B.
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [18] 1.55 μm InAs/InAlGaAs quantum dot DFB lasers
    Kim, Jin Soo
    Lee, Cheul-Ro
    Kwack, Ho-Sang
    Choi, Byung Seok
    Sim, Eundeuk
    Lee, Chul Wook
    Oh, Dae Kon
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (02) : 128 - 130
  • [19] Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm
    Caroff, P., 1600, Japan Society of Applied Physics (44): : 33 - 36
  • [20] Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
    Hantschmann, Constanze
    Vasil'ev, Peter P.
    Chen, Siming
    Liao, Mengya
    Seeds, Alwyn J.
    Liu, Huiyun
    Penty, Richard, V
    White, Ian H.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2018, 36 (18) : 3837 - 3842
12345