Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

被引：0

作者：

Li, Zhibo ^{[1
]}

Shutts, Samuel ^{[1
]}

Allford, Craig P. ^{[1
]}

Shi, Bei ^{[2
]}

Luo, Wei ^{[2
]}

Lau, Kei May ^{[2
]}

Smowton, Peter M. ^{[1
]}

机构：

[1] Cardiff Univ, Sch Phys & Astron, EPSRC Future Compound Semicond Mfg Hub, Cardiff, S Glam, Wales

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

2019 IEEE PHOTONICS CONFERENCE (IPC) | 2019年

基金：

英国工程与自然科学研究理事会;

关键词：

InAs Quantum Dots; Defects; Monolithic Growth; 1.55 mu m laser diodes;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-area 1.55 mu m InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.

引用

页数：2

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