Self-organized porous-alumina implantation masks for generating nanoscale arrays

被引:20
|
作者
Rehn, LE [1 ]
Kestel, BJ [1 ]
Baldo, PM [1 ]
Hiller, J [1 ]
McCormick, AW [1 ]
Birtcher, RC [1 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
ion implantation; mask; array; nanostructures;
D O I
10.1016/S0168-583X(03)00805-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Starting from two-step anodizing recipes available in the literature, we fabricated self-supporting ordered ion-implantation masks that are several mm(2) in area and approximately 2 mum thick. SEM micrographs reveal self-organized structures with straight open pores, 50-150 nm in diameter, extending completely through the mask. As reported previously, the pore diameter and spacing depend critically upon the anodization parameters, e.g. type of acid and its molality, the applied voltage and the solution temperature. Ion-milling procedures were developed for opening the bottoms of the anodized pores. These masks appear quite robust during exposure to ion beams of I MeV He, Ne and Kr. The steps necessary to fabricate the implantation masks, including opening the pores, are described. Measurements are reported of the angular dependence of the transmitted ion current; these results are consistent with the physical dimensions of the opened pores. TEM images of an implanted array are also shown. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码:490 / 494
页数:5
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