Self-organized fabrication of planar GaAs nanowhisker arrays

被引：34
|
作者：
Haraguchi, K
Hiruma, K
Katsuyama, T
Tominaga, K
Shirai, M
Shimada, T
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 03期
关键词：
D O I：
10.1063/1.118069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices. (C) 1996 American Institute of Physics.
引用
收藏
页码：386 / 387
页数：2
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