Defect-related photoluminescence of silicon nanoparticles produced by pulsed ion-beam ablation in vacuum

被引：6

作者：

Zhu, XP ^{[1
]}

Yukawa, T ^{[1
]}

Hirai, M ^{[1
]}

Suzuki, T ^{[1
]}

Suematsu, H ^{[1
]}

Jiang, WH ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 242卷 / 3-4期

关键词：

Si nanoparticle; photoluminescence; pulsed ion-beam evaporation; ablation plasma;

D O I：

10.1016/j.apsusc.2004.08.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Visible light emission has been observed from Si nanoparticles produced using an intense pulsed ion-beam evaporation (IBE) technique in vacuum. The as-prepared Si nanoparticles possess good crystallinity without any post-annealing. Room-temperature photoluminescence (PL) spectra for the Si nanoparticles were registered in blue-green range. The average crystal size (around 20 nm) estimated from glancing angle X-ray diffraction (GAXRD) was relatively large, inconsistent with quantum size effect for the light emission. The Si nanoparticles was exposed to O-2 gas at elevated temperature and hydrofluoric acid (HF) vapor at room temperature for examining the PL source, where significant deterioration of PL intensity was found subsequently. Combined with analyses of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX), the PL is attributable to oxide defects of the samples. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：256 / 260

页数：5

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