Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique

被引：8
|
作者：
Araya, M. [2 ]
Diaz-Droguett, D. E. [3 ]
Ribeiro, M. [4 ]
Albertin, K. F. [6 ]
Avila, J. [5 ]
Fuenzalida, V. M. [5 ]
Espinoza, R. [2 ]
Criado, D. [1 ,2 ]
机构：
[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210170 Santo Andre, SP, Brazil
[2] Univ Chile, Dept Ciencias Mat, FCFM, Santiago 6511226, Chile
[3] Pontificia Univ Catolica Chile, Santiago, Chile
[4] Univ Sao Paulo, EPUSP, BR-5424970 Sao Paulo, Brazil
[5] Univ Chile, Dept Fis, FCFM, Santiago 6511226, Chile
[6] Univ Fed ABC, CECS, BR-09210170 Santo Andre, SP, Brazil
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 05期
关键词：
Electron beam; Silicon oxide; Photoluminescence; DEPENDENT PHOTOLUMINESCENCE; TUNABLE PHOTOLUMINESCENCE; SILICON NANOPARTICLES; SI NANOPARTICLES; LOW-TEMPERATURE; NANOCRYSTALLITES; LUMINESCENCE; MATRIX;
D O I：
10.1016/j.jnoncrysol.2011.12.072
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：880 / 884
页数：5
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