Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique

被引：8

作者：

Araya, M. ^{[2
]}

Diaz-Droguett, D. E. ^{[3
]}

Ribeiro, M. ^{[4
]}

Albertin, K. F. ^{[6
]}

Avila, J. ^{[5
]}

Fuenzalida, V. M. ^{[5
]}

Espinoza, R. ^{[2
]}

Criado, D. ^{[1
,2
]}

机构：

[1] Univ Fed ABC, Ctr Ciencias Nat & Humanas, BR-09210170 Santo Andre, SP, Brazil

[2] Univ Chile, Dept Ciencias Mat, FCFM, Santiago 6511226, Chile

[3] Pontificia Univ Catolica Chile, Santiago, Chile

[4] Univ Sao Paulo, EPUSP, BR-5424970 Sao Paulo, Brazil

[5] Univ Chile, Dept Fis, FCFM, Santiago 6511226, Chile

[6] Univ Fed ABC, CECS, BR-09210170 Santo Andre, SP, Brazil

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 05期

关键词：

Electron beam; Silicon oxide; Photoluminescence; DEPENDENT PHOTOLUMINESCENCE; TUNABLE PHOTOLUMINESCENCE; SILICON NANOPARTICLES; SI NANOPARTICLES; LOW-TEMPERATURE; NANOCRYSTALLITES; LUMINESCENCE; MATRIX;

D O I：

10.1016/j.jnoncrysol.2011.12.072

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si-K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

引用

页码：880 / 884

页数：5

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