Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

被引：14
|
作者：
Zhang, W. -D. [1 ,2 ]
Growden, T. A. [3 ,4 ]
Storm, D. F. [5 ]
Meyer, D. J. [5 ]
Berger, P. R. [3 ]
Brown, E. R. [1 ,2 ]
机构：
[1] Wright State Univ, Dept Phys, Dayton, OH 45435 USA
[2] Wright State Univ, Dept Elect Engn, Dayton, OH 45435 USA
[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[4] Naval Res Lab, Washington, DC 20375 USA
[5] US Naval Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 01期
基金：
美国国家科学基金会;
关键词：
GaN/AlN; heterostructure; measurement; modeling; P-SPICE; resonant tunneling diode (RTD); switching time;
D O I：
10.1109/TED.2019.2955360
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The experimental and simulated switching behavior across the negative differential resistance (NDR) region ofGaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%-90% experimental switching time was 55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (1.5), relatively high specific contact resistance (>= 1 x 10(-6) cm(2)), and relatively large specific capacitance limit the switching time.
引用
收藏
页码：75 / 79
页数：5
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共 41 条
  • [31] IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES WITH SWITCHING TIME OF 1.5PS
    SHIMIZU, N
    NAGATSUMA, T
    WAHO, T
    SHINAGAWA, M
    YAITA, M
    YAMAMOTO, M
    [J]. ELECTRONICS LETTERS, 1995, 31 (19) : 1695 - 1697
  • [32] Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
    Encomendero, Jimy
    Yan, Rusen
    Verma, Amit
    Islam, S. M.
    Protasenko, Vladimir
    Rouvimov, Sergei
    Fay, Patrick
    Jena, Debdeep
    Xing, Huili Grace
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (10)
  • [33] Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes
    Zhang, HePeng
    Xue, JunShuai
    Fu, YongRui
    Li, LanXing
    Sun, ZhiPeng
    Yao, JiaJia
    Liu, Fang
    Zhang, Kai
    Ma, XiaoHua
    Zhang, JinCheng
    Hao, Yue
    [J]. JOURNAL OF APPLIED PHYSICS, 2021, 129 (01)
  • [34] Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
    Cornuelle, Evan M.
    Growden, Tyler A.
    Storm, David F.
    Brown, Elliott R.
    Zhang, Weidong
    Downey, Brian P.
    Gokhale, Vikrant
    Ruppalt, Laura B.
    Champlain, James G.
    Peri, Prudhvi
    McCartney, Martha R.
    Smith, David J.
    Meyer, David J.
    Berger, Paul R.
    [J]. AIP ADVANCES, 2020, 10 (05)
  • [35] Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes-Theoretical investigation
    Chen, Haoran
    Yang, Lin'an
    Long, Shuang
    Hao, Yue
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)
  • [36] INVESTIGATION OF SWITCHING BEHAVIOR OF P-I-N DIODES USING ELECTRIC ANALOG MODELS
    ILLI, MP
    BENEKING, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 252 - &
  • [37] Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates
    Liu, Fang
    Xue, JunShuai
    Yao, JiaJia
    Wu, GuanLin
    Li, ZuMao
    Liu, RenJie
    Guo, Zhuang
    Zhang, Kai
    Zhang, JinCheng
    Hao, Yue
    [J]. APPLIED PHYSICS LETTERS, 2024, 124 (07)
  • [38] PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE
    SHIMIZU, N
    NAGATSUMA, T
    SHINAGAWA, M
    WAHO, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 262 - 264
  • [39] Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures
    Rong, Taotao
    Yang, Lin-An
    Yang, Lin
    Hao, Yue
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (04)
  • [40] Comment on "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)]
    Belyaev, AE
    Foxon, CT
    Novikov, SV
    Makarovsky, O
    Eaves, L
    Kappers, MJ
    Humphreys, CJ
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (17) : 3626 - 3627
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