PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE

被引：23
|
作者：
SHIMIZU, N
NAGATSUMA, T
SHINAGAWA, M
WAHO, T
机构：
[1] NTT LSI Laboratories
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期
关键词：
D O I：
10.1109/55.790729
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To demonstrate picosecond-switching time for In0.53Ga0.47As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD's with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5 x 10(5) A/cm(2) and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.
引用
收藏
页码：262 / 264
页数：3
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