Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

被引：14

作者：

Zhang, W. -D. ^{[1
,2
]}

Growden, T. A. ^{[3
,4
]}

Storm, D. F. ^{[5
]}

Meyer, D. J. ^{[5
]}

Berger, P. R. ^{[3
]}

Brown, E. R. ^{[1
,2
]}

机构：

[1] Wright State Univ, Dept Phys, Dayton, OH 45435 USA

[2] Wright State Univ, Dept Elect Engn, Dayton, OH 45435 USA

[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[4] Naval Res Lab, Washington, DC 20375 USA

[5] US Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 01期

基金：

美国国家科学基金会;

关键词：

GaN/AlN; heterostructure; measurement; modeling; P-SPICE; resonant tunneling diode (RTD); switching time;

D O I：

10.1109/TED.2019.2955360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimental and simulated switching behavior across the negative differential resistance (NDR) region ofGaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%-90% experimental switching time was 55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (1.5), relatively high specific contact resistance (>= 1 x 10(-6) cm(2)), and relatively large specific capacitance limit the switching time.

引用

页码：75 / 79

页数：5

共 41 条

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