Terahertz luminescence of GaAs-Based heterostructures with quantum wells under the optical excitation of donors

被引：5

作者：

Bekin, NA ^{[1
]}

Zhukavin, RK

Kovalevskii, KA

Pavlov, SG

Zvonkov, BN

Uskova, EA

Shastin, VN

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Nizhnii Novgorod State Univ, Nizhni Novgorod Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Magnetic Material; Active Layer; Electromagnetism; Spontaneous Emission; Multilayered Structure;

D O I：

10.1134/1.1852648

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of similar to3-3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO(2) laser at liquid-helium temperature. It is shown that the population inversion and amplification in an active layer of 100-300 cm(-1) in multilayered structures with quantum wells (50 periods) and a concentration of doping centers N(D) approximate to 10(11) cm(-2) can be attained under the excitation-flux density 10(23) photons/(cm(2) s). (C) 2005 Pleiades Publishing, Inc.

引用

页码：67 / 72

页数：6

共 50 条

[31] INITIAL RELAXATION OF PHOTOEXCITED CARRIERS IN GAAS AND GAAS QUANTUM WELLS UNDER SUBPICOSECOND EXCITATION
DEVEAUD, B
SHAH, J
DAMEN, TC
GOSSARD, AC
LUGLI, P
SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 435 - 438
[32] Intersubband photoluminescence of GaAs quantum wells under selective interband excitation
Sauvage, S
Boucaud, P
Julien, FH
GauthierLafaye, O
Berger, V
Nagle, J
APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1183 - 1185
[33] EXCITON DYNAMICS IN GAAS QUANTUM-WELLS UNDER RESONANT EXCITATION
VINATTIERI, A
SHAH, J
DAMEN, TC
KIM, DS
PFEIFFER, LN
MAIALLE, MZ
SHAM, LJ
PHYSICAL REVIEW B, 1994, 50 (15): : 10868 - 10879
[34] Terahertz-Induced Optical Emission of Photoexcited Undoped GaAs Quantum Wells
Shinokita, K.
Hirori, H.
Tanaka, K.
Mochizuki, T.
Kim, C.
Akiyama, H.
Pfeiffer, L. N.
West, K. W.
PHYSICAL REVIEW LETTERS, 2013, 111 (06)
[35] Efficiency of GaAs-based pulsed terahertz emitters
Reklaitis, A.
ACTA PHYSICA POLONICA A, 2008, 113 (03) : 903 - 908
[36] Optical and terahertz characterization of Be-doped GaAs/AlAs multiple quantum wells
Cechavicius, B
Kavaliauskas, J
Krivaite, G
Seliuta, D
Sirmulis, E
Devenson, J
Valusis, G
Sherliker, B
Halsall, MP
Steer, MJ
Harrison, P
ACTA PHYSICA POLONICA A, 2005, 107 (02) : 328 - 332
[37] Improved Performance of GaAs-based Terahertz Emitters
Headley, C.
Fu, L.
Parkinson, P.
Xu, X.
Lloyd-Hughes, J.
Jagadish, C.
Johnston, M. B.
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
[38] OPTICAL SPECTROSCOPY OF QUANTUM WELLS UNDER HIGH-EXCITATION
BONGIOVANNI, G
MOSER, J
STAEHLI, JL
HELVETICA PHYSICA ACTA, 1989, 62 (6-7): : 650 - 655
[39] Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm
Morozov, S. V.
Kryzhkov, D. I.
Aleshkin, V. Ya.
Zvonkov, B. N.
Vikhrova, O. I.
SEMICONDUCTORS, 2013, 47 (11) : 1504 - 1507
[40] Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures
Borri, P
Gurioli, M
Colocci, M
Martelli, F
Polimeni, A
Patane, A
Capizzi, M
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1383 - 1387

← 1 2 3 4 5 →