Improved Performance of GaAs-based Terahertz Emitters

被引：0
|
作者：
Headley, C. [1 ]
Fu, L. [2 ]
Parkinson, P. [1 ]
Xu, X. [1 ,2 ]
Lloyd-Hughes, J. [1 ]
Jagadish, C. [2 ]
Johnston, M. B. [1 ]
机构：
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Australian Natl Univ, Res Sch Phys & Engn, Canberra, ACT, Australia
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
基金：
英国工程与自然科学研究理事会; 澳大利亚研究理事会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)(2)S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
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