Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation

被引：28
|
作者：
Headley, Carl [1 ]
Fu, Lan [2 ]
Parkinson, Patrick [1 ]
Xu, Xinlong [1 ]
Lloyd-Hughes, James [1 ]
Jagadish, Chennupati [2 ]
Johnston, Michael B. [1 ]
机构：
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Australian Natl Univ, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 01期
基金：
澳大利亚研究理事会; 英国工程与自然科学研究理事会;
关键词：
Photoconductive switch (PCS); surface passivation (SP); terahertz (THz); time-domain spectroscopy;
D O I：
10.1109/JSTQE.2010.2047006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4)(2)S surface passivation (SP) and silicon nitride (Si3N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined using THz emission spectroscopy and optical pump-THz probe spectroscopy. The power of THz radiation from the surface of photoexcited GaAs increased by a factor of 5 after passivation and encapsulation, while the process lengthened the trapping time for photoexcited charge carriers. By fabricating and assessing the performance of photoconductive switches, we found that passivation and encapsulation increased the average THz power generated fourfold.
引用
收藏
页码：17 / 21
页数：5
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