On spectrometric performance of GaAs-based radiation detectors

被引：1

作者：

Dubecky, F ^{[1
]}

Zat'ko, B ^{[1
]}

Darmo, J ^{[1
]}

Sekácová, M ^{[1
]}

Krempasky, M ^{[1
]}

Necas, V ^{[1
]}

Hlavác, S ^{[1
]}

Rucek, M ^{[1
]}

Senderák, R ^{[1
]}

Szentpáli, B ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ASDAM.2000.889548

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In the work basic problems and advantages related to spectrometric applications of GaAs-based radiation detectors for X- and gamma -ray region. Two types of detectors were tested: based on (i) semi-insulating GaAs bulk substrate and (ii) vapor phase epitaxy GaAs. Pulse height spectra for detection of Am-341 and Co-57 radionuclide decay standards taken by detectors are demonstrated. With a small volume GaAs detector energy resolution <1 keV is achievable at room temperature. Necessity of low noise F-E readout electronic chain is demonstrated.

引用

页码：475 / 478

页数：4

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