Terahertz luminescence of GaAs-Based heterostructures with quantum wells under the optical excitation of donors

被引：5
|
作者：
Bekin, NA [1 ]
Zhukavin, RK
Kovalevskii, KA
Pavlov, SG
Zvonkov, BN
Uskova, EA
Shastin, VN
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Nizhnii Novgorod State Univ, Nizhni Novgorod Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
Magnetic Material; Active Layer; Electromagnetism; Spontaneous Emission; Multilayered Structure;
D O I：
10.1134/1.1852648
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of similar to3-3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO(2) laser at liquid-helium temperature. It is shown that the population inversion and amplification in an active layer of 100-300 cm(-1) in multilayered structures with quantum wells (50 periods) and a concentration of doping centers N(D) approximate to 10(11) cm(-2) can be attained under the excitation-flux density 10(23) photons/(cm(2) s). (C) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：67 / 72
页数：6
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