Terahertz luminescence of GaAs-Based heterostructures with quantum wells under the optical excitation of donors

被引：5

作者：

Bekin, NA ^{[1
]}

Zhukavin, RK

Kovalevskii, KA

Pavlov, SG

Zvonkov, BN

Uskova, EA

Shastin, VN

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Nizhnii Novgorod State Univ, Nizhni Novgorod Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Magnetic Material; Active Layer; Electromagnetism; Spontaneous Emission; Multilayered Structure;

D O I：

10.1134/1.1852648

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of similar to3-3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO(2) laser at liquid-helium temperature. It is shown that the population inversion and amplification in an active layer of 100-300 cm(-1) in multilayered structures with quantum wells (50 periods) and a concentration of doping centers N(D) approximate to 10(11) cm(-2) can be attained under the excitation-flux density 10(23) photons/(cm(2) s). (C) 2005 Pleiades Publishing, Inc.

引用

页码：67 / 72

页数：6

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