Nitride-Based p-i-n Ultraviolet Bandpass Photodetectors with Short-wave Barrier Layer

被引：0

作者：

Wang, Jun ^{[1
]}

Guo, Jin ^{[1
]}

Wu, Haoran ^{[1
]}

Wang, Guosheng ^{[1
]}

Song, Man ^{[1
]}

Xie, Feng ^{[1
]}

Wang, Wanjun ^{[1
]}

机构：

[1] China Elect Technol Grp Corp, Res Inst 38, Hefei 230088, Anhui, Peoples R China

来源：

2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2016年

关键词：

Ultraviolet; simulation; unipolar blocking layers; band-pass photodiodes; SAPPHIRE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a numerical simulation study of nitride-based p-i-n ultraviolet bandpass photodetectors, which was designed with a high Al composition AlGaN unipolar barrier layer. The AlGaN unipolar blocking layers act as potential barrier that reduce the collection of carriers generated by high energy photons in p-Al0.1Ga0.9N short-Wave filter layer. Compared to the conventional nitride-based p-i-n band-pass photodiodes, this new structure devices are capable high short-wave rejection ration. To validate the model, we compared the simulation predictions with experimental data of conventional p-i-n bandpass photodiodes published in the literature. This concept can be applicable for any p-i-n photodetectors.

引用

页数：3

共 50 条

[1] Nitride-based p-i-n bandpass photodetectors
Chiou, YZ
[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 172 - 174
[2] The effect of the intrinsic layer on the reliability of nitride-based p-i-n photodetectors
Chiou, Y. Z.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (05)
[3] The Effect of the Intrinsic Layer on Reliability of Nitride-based p-i-n Photodetectors
Chiou, Y. Z.
Lin, Y. G.
Ko, T. K.
[J]. AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE, 2009,
[4] Nitride-based p-i-n photodetectors with Ni catalyst processing
Chen, Chin-Hsiang
[J]. GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
[5] High-responsivity GeSn short-wave infrared p-i-n photodetectors
Zhang, Dongliang
Xue, Chunlai
Cheng, Buwen
Su, Shaojian
Liu, Zhi
Zhang, Xu
Zhang, Guangze
Li, Chuanbo
Wang, Qiming
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (14)
[6] Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer
Liu, C. H.
Lam, T. K.
Ko, T. K.
Chang, S. J.
Sun, Y. X.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (04) : H232 - H234
[7] High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application
Zhao, Yue
Wang, Nan
Yu, Kai
Zhang, Xiaoming
Li, Xiuli
Zheng, Jun
Xue, Chunlai
Cheng, Buwen
Li, Chuanbo
[J]. CHINESE PHYSICS B, 2019, 28 (12)
[8] Nitride-based flip-chip p-i-n photodiodes
Ko, T. K.
Chang, S. J.
Su, Y. K.
Chiou, Y. Z.
Chang, C. S.
Shei, S. C.
Sheu, J. K.
Lai, W. C.
Lin, Y. C.
Chen, W. S.
Shen, C. F.
[J]. IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2006, 29 (03): : 483 - 487
[9] GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors
Xu, G
Salvador, A
Bothckarev, A
Kim, W
Fan, Z
Tang, H
Morkoc, H
Smith, G
Estes, M
Goldenberg, B
Yang, W
Krishnankutty, S
[J]. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 112 - 113
[10] Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors
Wang, Jun
Guo, Jin
Xie, Feng
Wang, Wanjun
Wang, Guosheng
Wu, Haoran
Wang, Tanglin
Song, Man
[J]. 2015 INTERNATIONAL CONFERENCE ON OPTICAL INSTRUMENTS AND TECHNOLOGY: OPTICAL SENSORS AND APPLICATIONS, 2015, 9620

← 1 2 3 4 5 →