Nitride-Based p-i-n Ultraviolet Bandpass Photodetectors with Short-wave Barrier Layer

被引：0

作者：

Wang, Jun ^{[1
]}

Guo, Jin ^{[1
]}

Wu, Haoran ^{[1
]}

Wang, Guosheng ^{[1
]}

Song, Man ^{[1
]}

Xie, Feng ^{[1
]}

Wang, Wanjun ^{[1
]}

机构：

[1] China Elect Technol Grp Corp, Res Inst 38, Hefei 230088, Anhui, Peoples R China

来源：

2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2016年

关键词：

Ultraviolet; simulation; unipolar blocking layers; band-pass photodiodes; SAPPHIRE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a numerical simulation study of nitride-based p-i-n ultraviolet bandpass photodetectors, which was designed with a high Al composition AlGaN unipolar barrier layer. The AlGaN unipolar blocking layers act as potential barrier that reduce the collection of carriers generated by high energy photons in p-Al0.1Ga0.9N short-Wave filter layer. Compared to the conventional nitride-based p-i-n band-pass photodiodes, this new structure devices are capable high short-wave rejection ration. To validate the model, we compared the simulation predictions with experimental data of conventional p-i-n bandpass photodiodes published in the literature. This concept can be applicable for any p-i-n photodetectors.

引用

页数：3

共 50 条

[31] GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
Cheah, WK
Fan, WJ
Yoon, SE
Zhang, DH
Ng, BK
Loke, WK
Liu, R
Wee, ATS
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) : 1932 - 1934
[32] High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer
Lian Hai-Feng
Wang Guo-Sheng
Lu Hai
Ren Fang-Fang
Chen Dun-Jun
Zhang Rong
Zheng You-Dou
[J]. CHINESE PHYSICS LETTERS, 2013, 30 (01)
[33] Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
Jian, Li-Yi
Lee, Hsin-Ying
Lee, Ching-Ting
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (09) : 8445 - 8448
[34] Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
Li-Yi Jian
Hsin-Ying Lee
Ching-Ting Lee
[J]. Journal of Materials Science: Materials in Electronics, 2019, 30 : 8445 - 8448
[35] Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation
Nawwar, Mohamed A.
Abo Ghazala, Magdy S.
Sharaf El-Deen, Lobna M.
Anis, Badawi
El-Shaer, Abdelhamid
Elseman, Ahmed Mourtada
Rashad, Mohamed M.
Kashyout, Abd El-hady B.
[J]. RSC ADVANCES, 2023, 13 (14) : 9154 - 9167
[36] Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode
Verdun, Michael
Portier, Benjamin
Jaworowicz, Katarzyna
Jaeck, Julien
Lelarge, Francois
Guilet, Stephane
Dupuis, Christophe
Haidar, Riad
Pardo, Fabrice
Pelouard, Jean-Luc
[J]. APPLIED PHYSICS LETTERS, 2016, 108 (05)
[37] GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy
Zheng, Jun
Wang, Suyuan
Liu, Zhi
Cong, Hui
Xue, Chunlai
Li, Chuanbo
Zuo, Yuhua
Cheng, Buwen
Wang, Qiming
[J]. APPLIED PHYSICS LETTERS, 2016, 108 (03)
[38] High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates
Wang, Guosheng
Lu, Hai
Chen, Dunjun
Ren, Fangfang
Zhang, Rong
Zheng, Youdou
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (07) : 652 - 654
[39] Speed photodetectors based on amorphous and microcrystalline silicon p-i-n devices
Vieira, M
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (02) : 220 - 222
[40] Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
Li, Xiaojing
Zhao, Degang
Jiang, Desheng
Chen, Ping
Zhu, Jianjun
Liu, Zongshun
Le, Lingcong
Yang, Jing
He, Xiaoguang
Zhang, Liqun
Zhang, Shuming
Liu, Jianping
Yang, Hui
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (01):

← 1 2 3 4 5 →