The Effect of the Intrinsic Layer on Reliability of Nitride-based p-i-n Photodetectors

被引：0
|
作者：
Chiou, Y. Z. [1 ]
Lin, Y. G. [1 ]
Ko, T. K. [2 ]
机构：
[1] South Taiwan Univ, Dept Elect Engn, Tainan, Taiwan
[2] Epistar Corp, Tainan, Taiwan
来源：
AOE 2008: ASIA OPTICAL FIBER COMMUNICATION AND OPTOELECTRONIC EXPOSITION AND CONFERENCE | 2009年
关键词：
BANDPASS PHOTODETECTORS; UV PHOTODETECTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By means of 0.25 mu m, 0.4 mu m and 0.5 mu m-thick i-GaN layers, we have successfully proved the reliability of nitride-based p-i-n photo detectors (PDs) was highly sensitive to the thickness of intrinsic GaN layers. After current aging, the p-i-n PDs with thin i-layer exhibited a poor electrical strength. (C)2008 Optical Society of America
引用
收藏
页数：3
相关论文
共 50 条
  • [1] The effect of the intrinsic layer on the reliability of nitride-based p-i-n photodetectors
    Chiou, Y. Z.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (05)
  • [2] Nitride-based p-i-n bandpass photodetectors
    Chiou, YZ
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 172 - 174
  • [3] Nitride-based p-i-n photodetectors with Ni catalyst processing
    Chen, Chin-Hsiang
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
  • [4] Nitride-Based p-i-n Ultraviolet Bandpass Photodetectors with Short-wave Barrier Layer
    Wang, Jun
    Guo, Jin
    Wu, Haoran
    Wang, Guosheng
    Song, Man
    Xie, Feng
    Wang, Wanjun
    [J]. 2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN), 2016,
  • [5] Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer
    Liu, C. H.
    Lam, T. K.
    Ko, T. K.
    Chang, S. J.
    Sun, Y. X.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (04) : H232 - H234
  • [6] Nitride-based flip-chip p-i-n photodiodes
    Ko, T. K.
    Chang, S. J.
    Su, Y. K.
    Chiou, Y. Z.
    Chang, C. S.
    Shei, S. C.
    Sheu, J. K.
    Lai, W. C.
    Lin, Y. C.
    Chen, W. S.
    Shen, C. F.
    [J]. IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2006, 29 (03): : 483 - 487
  • [7] GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
    Cheah, WK
    Fan, WJ
    Yoon, SE
    Zhang, DH
    Ng, BK
    Loke, WK
    Liu, R
    Wee, ATS
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (09) : 1932 - 1934
  • [8] NONLINEARITY OF P-I-N PHOTODETECTORS
    HAYES, RR
    PERSECHINI, DL
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (01) : 70 - 72
  • [9] Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors
    Wang, Jun
    Guo, Jin
    Xie, Feng
    Wang, Wanjun
    Wang, Guosheng
    Wu, Haoran
    Wang, Tanglin
    Song, Man
    [J]. 2015 INTERNATIONAL CONFERENCE ON OPTICAL INSTRUMENTS AND TECHNOLOGY: OPTICAL SENSORS AND APPLICATIONS, 2015, 9620
  • [10] Noises of p-i-n UV photodetectors
    Gasparyan, Ferdinand V.
    Korman, Can E.
    Melkonyan, Slavik V.
    [J]. NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
12345