Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors

被引：1

作者：

Wang, Jun ^{[1
]}

Guo, Jin ^{[1
]}

Xie, Feng ^{[1
]}

Wang, Wanjun ^{[1
]}

Wang, Guosheng ^{[1
]}

Wu, Haoran ^{[1
]}

Wang, Tanglin ^{[1
]}

Song, Man ^{[1
]}

机构：

[1] China Elect Technology Grp Corp, Res Inst 38, Hefei 230088, Peoples R China

来源：

2015 INTERNATIONAL CONFERENCE ON OPTICAL INSTRUMENTS AND TECHNOLOGY: OPTICAL SENSORS AND APPLICATIONS | 2015年 / 9620卷

关键词：

Numerical simulation; photoresponse; GaN; ultraviolet; photodetector; doping; schottky; device design; TEMPERATURE; DETECTORS; ELECTRON; SILICON;

D O I：

10.1117/12.2191941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p-GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.

引用

页数：6

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