GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

被引：2

作者：

黄红娟 ^{[1
]}

闫大为 ^{[1
]}

王国胜 ^{[2
]}

谢峰 ^{[2
]}

杨国锋 ^{[1
]}

肖少庆 ^{[1
]}

顾晓峰 ^{[1
]}

机构：

[1] Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University

[2] The 38th Research Institute of China Electronics Technology Group Corporation

来源：

Chinese Optics Letters | 2014年 / 12卷 / 09期

基金：

中国博士后科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

GaN-based p; PD; n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates; type;

D O I：

暂无

中图分类号：

TN23 [紫外技术及仪器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

We study the performance of GaN-based p–i–n ultraviolet（UV） photodetectors（PDs） with a 60 nm thin ptype contact layer grown on patterned sapphire substrate（PSS）. The PDs on PSS exhibit a low dark current of;pA under a bias of-5 V, a large UV/visible rejection ratio of;×103, and a high-quantum efficiency of;0% at 365 nm under zero bias. The average quantum efficiency of the PDs still remains above 20% in the deep-UV region from 280 to 360 nm. In addition, the noise characteristics of the PDs are also discussed, and the corresponding specific detectivities limited by the thermal noise and the low-frequency 1/f noise are calculated.

引用

页码：70 / 73

页数：4

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