Ion implantation for micromaterial fabrication - fabrication and material properties

被引:0
|
作者
Nakano, S [1 ]
Ogiso, H [1 ]
Nakagawa, S [1 ]
Ishikawa, H [1 ]
Sato, H [1 ]
机构
[1] MITI, Agcy Ind Sci & Technol, Mech Engn Lab, Tsukuba, Ibaraki 305, Japan
关键词
ion implantation; surface modification; etching; material properties;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We used ion-implantation followed by etching to fabricate micromachine components from bulk silicon. The size of the ion-modified region was sufficiently small to make micro devices (e.g., devices with submieron dimensions). Ion implantation/etching techniques have the advantages of high controllability, high selectivity, and non-thermal processing, For 1x10(17) cm(2) gold ions implanted into silicon, micro cantilever beams were fabricated with a Young's modulus ranged from 13-8.5 Gpa. This micromachining technique is simple and effective to increasing a variety of micromaterial properties.
引用
收藏
页码:972 / 975
页数:4
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