Ion implantation for micromaterial fabrication - fabrication and material properties

被引:0
|
作者
Nakano, S [1 ]
Ogiso, H [1 ]
Nakagawa, S [1 ]
Ishikawa, H [1 ]
Sato, H [1 ]
机构
[1] MITI, Agcy Ind Sci & Technol, Mech Engn Lab, Tsukuba, Ibaraki 305, Japan
关键词
ion implantation; surface modification; etching; material properties;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We used ion-implantation followed by etching to fabricate micromachine components from bulk silicon. The size of the ion-modified region was sufficiently small to make micro devices (e.g., devices with submieron dimensions). Ion implantation/etching techniques have the advantages of high controllability, high selectivity, and non-thermal processing, For 1x10(17) cm(2) gold ions implanted into silicon, micro cantilever beams were fabricated with a Young's modulus ranged from 13-8.5 Gpa. This micromachining technique is simple and effective to increasing a variety of micromaterial properties.
引用
收藏
页码:972 / 975
页数:4
相关论文
共 50 条
  • [31] Diffusion barrier layer fabrication by plasma immersion Ion Implantation
    Kumar, M
    Rajkumar
    Kumar, D
    George, PJ
    Paul, AK
    VLSI CIRCUITS AND SYSTEMS, 2003, 5117 : 557 - 563
  • [32] An intelligent supervisory system for ion implantation in IC fabrication processes
    Shen, LC
    Hsu, PL
    CONTROL ENGINEERING PRACTICE, 1999, 7 (02) : 241 - 247
  • [33] FABRICATION OF QUANTUM WIRES BY GA FOCUSED-ION-BEAM IMPLANTATION AND THEIR TRANSPORT-PROPERTIES
    NAKATA, S
    YAMADA, S
    HIRAYAMA, Y
    SAKU, T
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (01): : 48 - 52
  • [34] RECENT TRENDS IN DEVICE FABRICATION USING ION-IMPLANTATION
    SCHWETTMANN, FN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 390 - 390
  • [35] Ultrashallow Junction (USJ) Fabrication by Advanced Ion Implantation Processes
    Qin, Shu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1855 - 1860
  • [36] Fabrication of wrinkled surfaces on polymer substrates by using ion implantation
    Yang, Chan Oh
    Her, Eun Kyu
    Oh, Kyu Hwan
    Kang, Tae Jin
    Park, Sook Young
    Kim, Hyun Jeong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (02) : 297 - 300
  • [37] Optoelectronic devices - Ion implantation allows fabrication of planar LED
    Chinnock, C
    LASER FOCUS WORLD, 1998, 34 (05): : 45 - +
  • [38] MOS device fabrication via plasma immersion ion implantation
    Chen, SM
    Gwilliam, RM
    Sealy, BJ
    SOLID-STATE ELECTRONICS, 1997, 41 (04) : 535 - 537
  • [39] FABRICATION OF BIPOLAR-TRANSISTORS BY MASKLESS ION-IMPLANTATION
    REUSS, RH
    MORGAN, D
    GOLDENETZ, A
    CLARK, WM
    RENSCH, DB
    UTLAUT, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 290 - 294
  • [40] A Plasma Immersion Ion Implantation system for SOI wafer fabrication
    Feng, LM
    Lamm, AJ
    Liu, W
    Garces, E
    Chan, C
    Current, MI
    Henley, FJ
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 289 - 292