共 50 条
- [31] The effect of ion mass on irradiation induced intermixing of GaAs/AlGaAs quantum wells [J]. MATERIALS MODIFICATION BY ION IRRADIATION, 1998, 3413 : 140 - 145
- [32] Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wells [J]. Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
- [35] Observation of below-bandgap excited terahertz emission in the action spectra of GaAs/AlGaAs multiple quantum wells [J]. IRMMW-THz2005: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, Vols 1 and 2, 2005, : 273 - 274
- [36] PREDICTED PERFORMANCE OF FRANZ-KELDYSH - EFFECT OPTICAL REFLECTION MODULATORS AND COMPARISONS WITH SIMILAR MULTIPLE-QUANTUM WELL-BASED DEVICES [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (04): : 257 - 264
- [37] THERMALLY INDUCED OPTICAL BISTABILITY AT ROOM TEMPERATURE IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS. [J]. Optica Acta, 1985, 33 (04): : 387 - 396
- [39] Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 555 - 558