Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses

被引：9
|
作者：
Nakano, H
Kubo, H
Mori, N
Hamaguchi, C
Eaves, L
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期
关键词：
free election laser; semiconductor heterostructure; impact ionization; Monte Carlo simulation;
D O I：
10.1016/S1386-9477(99)00382-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Luminescence from a GaAs/AlGaAs asymmetric double-quantum-well structure under intense mid-infrared ii-radiation with a free electron laser (FEL) has been observed. The FEL wavelength and power dependence has been measured, which is then compared with a result of a full-band Monte Carlo simulation. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：555 / 558
页数：4
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